Abstract
We have developed light-emitting devices (LEDs) of monodispersed silicon (Si) nanocrystallite active regions synthesized by pulsed laser ablation in inert background gas (PLA-IBG). The light emission spectrum had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap, at room temperature.
© 2001 IEEE
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