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  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper P1_12

SCH Doping Effects in a 1.55µm InGaAsP/InGaAsP MQW Electro-absorption Modulator

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Abstract

The effects of n-doped SCH region length tn as well as the general structure parameters in EA modulators were thoroughly analyzed. It was found that tn played a crucial role to achieve high-performances in addition to the detuning Δλ.

© 2001 IEEE

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