Abstract
Long-wavelength quantum-dot lasers were fabricated on inP (311)B substrates by using high-dense InAs quantum dots (9x1010 cm-2) as active media, which achieved 1.6-μm continuous-wave lasing at room temperature. The lasers had a low threshold current density of 380 A/cm2 and a high external differential quantum efficiency of 32%.
© 2001 IEEE
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