Abstract
We have investigated the Er3+ photoluminescence (PL) properties from Er doped Si-rich Si nitride (SRSN) films. Based on a comparison with Er doped Si-rich Si oxide (SRSO) films, breaking of nc-Si / Er coupling and Er deactivation in Er doped SRSN film are strongly reduced. We suggest that SRSN can be an effective alternative to SRSO for obtaining efficient Er activity.
© 2007 IEEE
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