Abstract
We have realized 1.3 µm-band highly strained InGaAs multiple quantum wells on a metamorphic InGaP graded buffer layer on a GaAs substrate grown by metal-organic vapor-phase epitaxy. We confirmed that the InGaP metamorphic buffer is more effective in improving the crystal quality than InGaAs buffer by performing photoluminescence and transmission electron microscope measurements.
© 2007 IEEE
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