Abstract
We report on the development of e-beam pumped mid-UV (~ 280nm) sources fabricated from AlGaN MQWs grown by plasma-assisted (PA) MBE on AlN/c-Al2O3 templates. The high output power above 100 mW has been demonstrated in a pulse-scanning regime. This achievement is attributed to the enhanced carrier confinement within the high-quality sub-monolayer digital alloying quantum wells and improved quality of the AlN buffer layer due to the high temperature PA MBE growth employed. The time-resolved photoluminescence shows the radiative recombination dominate the recombination process, indicating high crystal qualities.
© 2015 IEEE
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