Abstract
Low threshold current 1.5μm GaInAsP laser was obtained grown on directly bonded InP/Si substrate using MOVPE. To decrease the threshold current, the thickness and doping condition of p-InP cladding layer were optimized. In the new structure laser, the threshold current became half compared to the previous structure laser, and obtained almost comparable threshold current with the laser grown on InP substrate.
© 2017 Optical Society of America
PDF ArticleMore Like This
Kazuki Uchida, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, Xu Han, Gandhi Kallarasan Periyanayagam, Hirokazu Sugiyama, Masaki Aikawa, Natsuki Hayasaka, and Kazuhiko Shimomura
s2484 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017
Periyanayagam Gandhi Kallarasan, Naoki Kamada, Yuya Onuki, Kazuki Uchida, Hirokazu Sugiyama, Xu Han, Natsuki Hayasaka, Masaki Aikawa, and Kazuhiko Shimomura
JTu2A.12 CLEO: Applications and Technology (CLEO:A&T) 2018
Gandhi Kallarasan, Tetsuo Nishiyama, Kamada Naoki, Yuya Onuki, and Kazuhiko Shimomura
16p_C301_4 JSAP-OSA Joint Symposia (JSAP) 2016