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Conferences > CLEOPR > 2022 > CThA7D > CThA7D_03

Creation of Silicon Vacancy Center in Detonation Nanodiamonds by High Temperature Annealing

Konosuke Shimazaki, Hiroki Kawaguchi, Hideaki Takashima, Takuya Fabian Segawa, Frederick T.-K. So, Daiki Terada, Shinobu Onoda, Takeshi Ohshima, Masahiro Shirakawa, and Shigeki Takeuchi

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Abstract

Single-digit detonation nanodiamonds (DNDs) have attracted attention as single-photon emitters in many research fields. Here, the creation of silicon vacancy centers in DNDs by an annealing treatment up to 1100oC in high vacuum is reported.

© 2022 IEEE

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