Abstract
The electron beam laser is a technology in which laser emission is generated by exciting a single crystal semiconductor cavity with a high-energy electron beam. A large number of semiconductor materials have been shown capable of producing laser emission in this way. Of significance is that these materials include several II–VI semiconducting compounds from which junction laser emission has not been observed.
© 1976 Optical Society of America
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Hans D. Neumann
TUD6 Conference on Laser and Electrooptical Systems (CLEO:S&I) 1976
Robert B. Gill
WB3 Conference on Laser and Electrooptical Systems (CLEO:S&I) 1976
William C. O’Neal
THA9 Conference on Laser and Electrooptical Systems (CLEO:S&I) 1976