Abstract
The photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic applications. Here, we present a technique to determine the lifetime with picosecond resolution, revealing a 7.5 ps lifetime for GaAs nanowires.
© 2012 Optical Society of America
PDF ArticleMore Like This
M. Griebel, J. H. Smet, J. Kuhl, K. von Klitzing, D. Driscoll, C. Kadow, and A. C. Gossard
UWC5 Ultrafast Electronics and Optoelectronics (UEO) 2001
Jason B. Baxter and Charles A. Schmuttenmaer
MG1 International Conference on Ultrafast Phenomena (UP) 2006
A. Von Lehmen and J. M. Ballantyne
WA2 International Conference on Ultrafast Phenomena (UP) 1984