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Conferences > CLEO_AT > 2016 > ATh1J > ATh1J.7

Mid-Infrared Broadband Absorber of Full Semiconductor Epi-Layers

Shaohua Wang, Yufei Wang, Siriguleng Zhang, and Wanhua Zheng

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Abstract

We demonstrate a mid-infrared broadband absorber of full semiconductor epi-layers theoretically. The structure is of MIM-like with grating InAs(n-type,220nm)/InAs(I,220nm)/ InAs(n-type,1000nm). The absorptivity is over 80% from 8 μm to 12 μm.

© 2016 Optical Society of America

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