Ti/TaN Bilayer for Efficient Injection and Reliable AlGaN Nanowires LEDs

Davide Priante; Bilal Janjua; Aditya Prabaswara; Ram Chandra Subedi; Rami T. Elafandy; Sergei Lopatin; Dalaver H. Anjum; Chao Zhao; Tien Khee Ng; Boon S. Ooi

doi:10.1364/CLEO_AT.2018.JTu2A.91

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2018),
paper JTu2A.91
•https://doi.org/10.1364/CLEO_AT.2018.JTu2A.91

Ti/TaN Bilayer for Efficient Injection and Reliable AlGaN Nanowires LEDs

Davide Priante, Bilal Janjua, Aditya Prabaswara, Ram Chandra Subedi, Rami T. Elafandy, Sergei Lopatin, Dalaver H. Anjum, Chao Zhao, Tien Khee Ng, and Boon S. Ooi

CLEO: Applications and Technology 2018

San Jose, California United States
13–18 May 2018
ISBN: 978-1-943580-42-2

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Poster Session I (JTu2A)

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D. Priante, B. Janjua, A. Prabaswara, R. C. Subedi, R. T. Elafandy, S. Lopatin, D. H. Anjum, C. Zhao, T. K. Ng, and B. S. Ooi, "Ti/TaN Bilayer for Efficient Injection and Reliable AlGaN Nanowires LEDs," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2018), paper JTu2A.91.

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Abstract

Reliable operation of UV AlGaN-based nanowires-LED at high injection current was realized by incorporating a Ti-pre-orienting/TaN-diffusion-barrier bilayer, thus enhancing external quantum efficiency, and resolving the existing device degradation issue in group-III-nanowires-on-silicon devices.

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