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Si-based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K

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Abstract

We demonstrated optically pumped GeSn lasers with 20% maximum Sn content based on ridge waveguide with 5 and 20 µm ridge widths. The high operating temperature of 260 K was achieved with wider ridge device.

© 2019 The Author(s)

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