Abstract
Amorphous InZnO material is chosen for a phototransistor sensing layer, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1720 A/W) and good signal to noise ratio (~103) under the low blue light illumination.
© 2022 The Author(s)
PDF Article | Presentation VideoMore Like This
Fred S. Hickernell
WB6 Integrated and Guided Wave Optics (IGWO) 1980
Konstantina Kostourou, Volker Scheuer, and Daniel Kopf
TD.9 Optical Interference Coatings (OIC) 2022
Ji Sook Yang, Sung Hyeon Jung, and Hyung Koun Cho
JTu2A.3 3D Image Acquisition and Display: Technology, Perception and Applications (3D) 2022