Normal-Incidence Infrared Silicon Photodetectors Based on Surface-State Absorption and Their Applications

Zhao Wang; Zhao Wang; Haiyi Liu; Haiyi Liu; Ziyu Zhang; Ziyu Zhang; Kai Zou; Kai Zou; Xiaolong Hu; Xiaolong Hu; Xiaolong Hu

doi:10.1364/CLEO_AT.2022.JW3B.26

Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2022),
paper JW3B.26
•https://doi.org/10.1364/CLEO_AT.2022.JW3B.26

Normal-Incidence Infrared Silicon Photodetectors Based on Surface-State Absorption and Their Applications

Zhao Wang, Haiyi Liu, Ziyu Zhang, Kai Zou, and Xiaolong Hu

CLEO: Applications and Technology 2022

San Jose, California United States
15–20 May 2022
ISBN: 978-1-957171-05-0

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Joint Poster Session II-B (Virtual) (JW3B)

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Z. Wang, H. Liu, Z. Zhang, K. Zou, and X. Hu, "Normal-Incidence Infrared Silicon Photodetectors Based on Surface-State Absorption and Their Applications," in Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2022), paper JW3B.26.

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Abstract

We fabricated and tested a normal-incidence infrared silicon photodetector based on surface-state absorption for free-space optical applications. It featured -46-dBm sensitivity and near transparency at 1560-nm wavelength as well as broad spectral photoresponse.

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