Abstract
Although several models have been proposed to account for the influence of carrier transport, capture, and re-emission on the high-speed properties of multiple quantum well (MQW) lasers,1,2 very little experimental work has been carried out to directly determine the effective capture time into the QW's, τcap and the escape time out of the QW's, τesc. In the present work we utilize for the first time high-frequency impedance and modulation response measurements3 to evaluate τcap and τesc for In0.35Ga0.65As/GaAs MQW lasers with record 30 GHz modulation bandwidth.4
© 1994 IEEE
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