Abstract
A traditional goal in producing single crystals and thin films of indium antimonide, studying its physical and operational properties, and manufacturing devices based on this material is the development of high-by-sensitive-cooled photodetectors that belong to generations of discrete, linear (one-dimensional), and array (two-dimensional) detectors. Operating temperatures of these detectors are close to liquid nitrogen temperature which requires the use of different cryo- states, and they have background-limited performance.
© 1994 IEEE
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