Abstract
Bleaching properties of epi-layers of InxGa1-xAs compound with variable x on different substrates were tested with regard to their possible use as passive shutters for Er-glass (λ = 1.54µm) Ho (λ = 2.1µm) and Er (λ = 2.79-2.94µm) lasers. Passive Q-switching in Ho and Er lasers was achieved. Operation and limitations of using of these shutters in flashlamp and diode-pump IR solid-state lasers are discussed.
© 1994 IEEE
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