Abstract
Optical second-harmonic (SH) and sum-frequency (SF) measurements on vicinal Si(111)-interfaces provide some quantitative details on the microscopic structure of the interface of thermally grown oxide films subjected to a post oxidation annealing. A change of the azimuthal SF-anisotropy upon rapid thermal annealing (RTA) is attributed to a relaxation of atomic bondings at the interface consistent with a decrease of the interfacial trap density.1
© 1994 IEEE
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