Abstract
Liquid Phase Epitaxy (LPE) is a promising technique for producing planar waveguide lasers. This method has already achieved good results with Y3A15O12 (YAG) [1,2]. In this paper we report the growth and laser operation of layers of a new material: Y2SiO5 (YSO) which is a promising laser host especially doped with Tm for 2μm laser operation [3].
© 1996 IEEE
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