Abstract
We have determined the optimum geometry to generate intense THz radiation using an InAs emitter. A mode-locked Ti:sapphire laser delivered 100-fsec pulses in a 1-W average power for excitation. The sample was non-doped bulk InAs with a (100) surface. The surface of the InAs was placed parallel to the magnetic field up to 1.7 T by electromagnet, and the excitation laser irradiated the sample with a 1-mm diameter beam. The THz radiation was detected by a liquid-helium-cooled InSb bolometer, and the THz-radiation spectra were taken by a polarizing Michelson interferometer.
© 2000 IEEE
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