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Conferences > CLEO_Europe > 2000 > CMH > CMH6
  • Conference on Lasers and Electro-Optics Europe
  • Technical Digest Series (Optica Publishing Group, 2000),
  • paper CMH6

Novelphotoconductive detector with buried FIB implantedp-doped stripe

M. Vitzethum, M. Ruff, P. Kiesel, S. Malzer, G. H. Döhler, J. Koch, and A. D. Wieck

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Abstract

Focused Ion Beam (FIB) implantation is a well-established method for lateral patterning of two-dimensional electron gases. We utilize this technique for direct local doping in semiconductors without masking. Subsequent overgrowth of FIB doped layers or lateral structures by molecular beam epitaxy (MBE) allows the fabrication of buried microstructured doping patterns. This permits the realisation of a variety of new device designs.

© 2000 IEEE

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