Four-micron CW Operating Dy:PbGa2S4 Laser

Jan Šulc; Helena Jelínková; Maxim E. Doroschenko; Tasoltan T. Basiev; Vyacheslav V. Osiko; Valerii V. Badikov; Dmitrii V. Badikov

CLEO/Europe and EQEC 2011 Conference Digest
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CA8_6

Four-micron CW Operating Dy:PbGa₂S₄ Laser

Jan Šulc, Helena Jelínková, Maxim E. Doroschenko, Tasoltan T. Basiev, Vyacheslav V. Osiko, Valerii V. Badikov, and Dmitrii V. Badikov

The European Conference on Lasers and Electro-Optics 2011

Munich Germany
22–26 May 2011
ISBN: 978-1-4577-0532-8

From the session
Visible and Infrared Solid State Lasers (CA8)

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J. Šulc, H. Jelínková, M. E. Doroschenko, T. T. Basiev, V. V. Osiko, V. V. Badikov, and D. V. Badikov, "Four-micron CW Operating Dy:PbGa2S4 Laser," in CLEO/Europe and EQEC 2011 Conference Digest, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CA8_6.

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Abstract

To promising solid state materials, allowing direct laser emission in mid-infrared atmospheric transparency window from 4 up to 5 μm, belongs a dysprosium doped lead thiogallate crystal Dy³⁺:PbGa₂S₄.[1] In the first experiments as an excitation radiation source for Dy:PbGa₂S₄ laser the flash-lamp pumped lasers were used.[2] Improvement of Dy:PbGa₂S₄ crystal quality enabled to use also low pumping rate source based on diode pumped Nd:YAG laser operating at 1318 nm.[3] Energy up to 90 μJ in 4 ms long pulses (rep. rate 20Hz, mean output power 1.8 mW), was obtained at 4290 nm with slope efficiency 3% with respect to absorbed pumping energy. In present study we demonstrate CW operating Dy:PbGa₂S₄ laser excited at 1318 nm by diode pumped Nd:YAG.

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