Abstract
InGaAs/AlInAs/InP is a successful semiconductor material for operation of high performance mid-infrared quantum cascade lasers (QCLs) [1, 2]. However, in the THz region, a thin AlInAs barrier is required due to its high conduction band offset energy (530 meV) and is believed to limit a laser performance since subband position would be very sensitive to the layer thickness. In this work, we use a different barrier material to overcome this disadvantage: quaternary alloy AlInGaAs. Lattice matched AlInGaAs barriers are implemented in a bound-to-continuum four quantum wells active structure [3]. Al and Ga composition in the quaternary barrier is selected so as to provide the conduction band offset energy of (A) 150 meV and (B) 120 meV.
© 2013 IEEE
PDF ArticleMore Like This
C. Deutsch, H. Detz, A. Benz, M. Nobile, A.M. Andrews, P. Klang, W. Schrenk, G. Strasser, and K. Unterrainer
CC2_1 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2011
H. Detz, C. Deutsch, M. Nobile, P. Klang, A.M. Andrews, C. Schwarzer, W. Schrenk, K. Unterrainer, and G. Strasser
CMF5 CLEO: Science and Innovations (CLEO:S&I) 2011
M. Krall, B. Limbacher, M. A. Kainz, M. Brandstetter, C. Deutsch, D. C. MacFarland, T. Zederbauer, H. Detz, A. M. Andrews, W. Schrenk, G. Strasser, and K. Unterrainer
CC_P_15 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2017