Abstract
UV laser induced poling inhibition (PI) is a method for domain engineering in ferroelectric lithium niobate crystals. This method is capable of producing localised ferroelectric domains whose shape and orientation is defined by a UV laser pre-irradiated pattern. Poling inhibition is observed at the locations of the +z face of the crystal that have been exposed to UV laser radiation (244 nm–305 nm) prior to uniform domain inversion by electric field poling at room temperature[1].
© 2013 IEEE
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