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Cryogenic O-band photoluminescence spectroscopy of T-centers in monolithic Si for mesoscopic cavity quantum electrodynamics

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Abstract

We examine the 1325-nm T-center excitonic transitions in FZ-Si and SOI substrates towards a chip-scale strongly-coupled spin-photon interface. We further observe an unidentified doublet transition around 1312-nm in FZ-Si as a possible single-photon emitter.

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