Abstract
We report operation of AlGaN laser diodes grown on semipolar buffer layers partially relaxed by misfit dislocation formation at heterointerfaces remote from the active region. This approach offers a pathway to mid-UV AlGaN based lasers.
© 2012 Optical Society of America
PDF ArticleMore Like This
Matthew T. Hardy, Po S. Hsu, Ingrid Koslow, Daniel F. Feezell, Shuji Nakamura, James S. Speck, and Steven P. DenBaars
CTu2N.2 CLEO: Science and Innovations (CLEO:S&I) 2012
Roy B. Chung, Erin C. Young, Daniel A. Haeger, Steven P. DenBaars, James S. Speck, and Daniel A. Cohen
JTuB2 CLEO: Applications and Technology (CLEO:A&T) 2011
T. Wernicke, M. Martens, C. Kuhn, C. Reich, F. Mehnke, J. Jeschke, M. Feneberg, J. Rass, J. Enslin, M. Lapeyrade, U. Zeimer, A. Mogilatenko, S. Einfeldt, V. Kueller, S. Hagedorn, A. Knauer, C. Hartmann, J. Wollweber, R. Goldhahn, M. Bickermann, M. Weyers, and M. Kneissl
DM2D.4 Solid-State and Organic Lighting (SOLED) 2015