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Tensile-Strained Ge/SiGe Quantum-Well Microdisks with overlying SiNx Stressors

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Abstract

We demonstrate Ge/SiGe multiple-quantum-well microdisks on Si substrates with SiNx stressors on top. The strain transferred from the SiNx to the Ge quantum wells are determined by photoluminescence and Raman measurements, and are in agreement with simulation results.

© 2016 Optical Society of America

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