Abstract
We present electro-optic degenerate band edge resonators in silicon based on carrier injection modulation. Measurements of fabricated devices demonstrate a tunability of 1.09 nm/V.
© 2016 Optical Society of America
PDF ArticleMore Like This
Michael G. Wood, Justin R. Burr, and Ronald M. Reano
FTu2B.1 Frontiers in Optics (FiO) 2015
Justin R. Burr, Michael G. Wood, and Ronald M. Reano
STu3M.2 CLEO: Science and Innovations (CLEO:S&I) 2014
Abdul Shakoor, Kengo Nozaki, Eiichi Kuramochi, Katsuhiko Nishiguchi, Akihiko Shinya, and Masaya Notomi
20a_C1_3 JSAP-OSA Joint Symposia (JSAP) 2014