Plasmon-Enhanced Electrically Pumped Random Lasing in ZnO Metal-Semiconductor-Metal Devices

Mohammad Suja; Sunayna Binte Bashar; Jianlin Liu

doi:10.1364/CLEO_SI.2016.SW1M.5

Conference on Lasers and Electro-Optics
OSA Technical Digest (2016) (Optica Publishing Group, 2016),
paper SW1M.5
•https://doi.org/10.1364/CLEO_SI.2016.SW1M.5

Plasmon-Enhanced Electrically Pumped Random Lasing in ZnO Metal-Semiconductor-Metal Devices

Mohammad Suja, Sunayna Binte Bashar, and Jianlin Liu

CLEO: Science and Innovations 2016

San Jose, California United States
5–10 June 2016
ISBN: 978-1-943580-11-8

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Novel Material Lasers (SW1M)

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M. Suja, S. B. Bashar, and J. Liu, "Plasmon-Enhanced Electrically Pumped Random Lasing in ZnO Metal-Semiconductor-Metal Devices," in Conference on Lasers and Electro-Optics, OSA Technical Digest (2016) (Optica Publishing Group, 2016), paper SW1M.5.

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Abstract

Plasmonic enhancement in random lasing is realized from ZnO metal-semiconductor-metal devices. The output power of random laser is increased while lasing threshold is decreased after Ag nanoparticles are incorporated on ZnO film due to plasmonic coupling.

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