Enhanced performance of 450 nm GaN laser diodes with an optical feedback for high bit-rate visible light communication

M. Hosne M. Shamim; M. A. Shemis; Chao Shen; Hassan M. Oubei; Tien Khee Ng; Boon S. Ooi; M. Z. M. Khan

doi:10.1364/CLEO_AT.2018.JTu2A.29

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2018),
paper JTu2A.29
•https://doi.org/10.1364/CLEO_AT.2018.JTu2A.29

Enhanced performance of 450 nm GaN laser diodes with an optical feedback for high bit-rate visible light communication

M. Hosne M. Shamim, M. A. Shemis, Chao Shen, Hassan M. Oubei, Tien Khee Ng, Boon S. Ooi, and M. Z. M. Khan

CLEO: Science and Innovations 2018

San Jose, California United States
13–18 May 2018
ISBN: 978-1-943580-42-2

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Poster Session I (JTu2A)

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M. H. M. Shamim, M. A. Shemis, C. Shen, H. M. Oubei, T. K. Ng, B. S. Ooi, and M. Z. M. Khan, "Enhanced performance of 450 nm GaN laser diodes with an optical feedback for high bit-rate visible light communication," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2018), paper JTu2A.29.

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Abstract

First report on significant performance improvement of 450 nm blue edge-emitting laser in terms of optical linewidth (~6.5 times), modulation bandwidth (~16%) and SMSR (~7.4 times) by employing self-injection locking scheme.

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