Abstract
We present direct bandgap GeSn crystallized on dielectric layers at <450 °C with room-temperature photoluminescence, ~0.1 ns transient optical gain >4000/cm at λ=2100–2350 nm, and a photoconductive responsivity of ~10 mA/W @1V at λ=2180 nm.
© 2018 The Author(s)
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