Abstract
We demonstrate a silicon micro-ring modulator supporting 128 Gb/s NRZ modulation with SNR=5.2, ER=3.8dB, 0.8 Vpp drive swing, and 5.3 fJ/bit power consumption. We have also achieved 192 Gb/s PAM-4 modulation with TDECQ of 2.5dB.
© 2021 The Author(s)
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