Abstract
A new low-dimensional system consisting of a highly tensile strained Germanium quantum well (QW) was epitaxially grown on Si wafers using GeSn as barriers. The thickness of the well was modulated from 12.5nm, down to 1.5nm, whereas the tensile strain was increased from 1.1% to 1.67%. Infrared spectroscopic ellipsometry was used to investigate the optical activity of the QWs.
© 2021 The Author(s)
PDF Article | Presentation VideoMore Like This
Daniel C. Bertolet, Jung-Kuei Hsu, and Kei May Lau
TuE7 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989
Jialin Jiang and Junqiang Sun
JTu4A.1 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2016
Muyu Xue, Xiaochi Chen, Junyan Chen, Ming-Yen Kao, Colleen Shang, Kai Zang, Yijie Huo, Ching-Ying Lu, Yusi Chen, Huiyang Deng, Theodore I. Kamins, and James S. Harris
JTu5A.125 CLEO: Applications and Technology (CLEO:A&T) 2017