Abstract

The three basic ingredients of our nanofabrication scheme on silicon surfaces are: (a) utilizing silicon hydride as the initial resist, (b) employing a scanning tunneling microscope (STM) as the e-beam source to desorb H-atoms of the resist to create patterns in an ultrahigh vacuum (UHV) environment, and (c) using either the original H-resist or an oxide-mask generated from (a) and (b) for further pattern transfer. Each of these ideas has been investigated independently by different research groups for different purposes. A brief summary seems appropriate to show how basic research may lead to the development of new technology and vice versa.

© 1997 Optical Society of America