Abstract
Hard, amorphous carbon films were deposited from an ion source using fullerite as carbon feedstock. For fixed ion energies, the film resistivities decreased exponentially with substrate temperature, suggesting activated growth of a conductive phase. Resistivity at 300 K ranged from 10-3 to 104 Ωm. E04 optical gaps of conductive films ranged from 0.1 to 1.1 eV.
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