Abstract
Metal-oxide-semiconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on (100) highly-oriented polycrystalline diamond (HOD) and single crystal insulating diamond substrates. The HOD material has properties superior to randomly-oriented polycrystalline diamond and offers a viable alternative to large area single crystal diamond. Concentric-ring FETs were fabricated using standard optical lithography and silicon dioxide was used as the gate dielectric. Diamond FETs exhibited well-behaved pinch-off and saturation of the channel current at temperatures up to 325°C for both HOD and single crystal diamond devices. Single crystal devices have been characterized in both enhancement and depletion-mode at elevated temperatures in excess of 500°C. Single crystal devices have been biased in common source amplifier configurations and NAND and NOR digital logic circuits. The behavior of field-effect transistors fabricated on HOD and single crystal diamond films, as well as diamond transistor circuits will be presented.
© 1995 Optical Society of America
PDF ArticleMore Like This
D. K. Reinhard, M. Ulczynski, and R. N. Chakraborty
DTPA643 Applications of Diamond Films and Related Materials (DFM) 1995
Jan W. Vandersande, Richard Ewell, Jean-Pierre Fleurial, and Hylan B. Lyon
DTPA623 Applications of Diamond Films and Related Materials (DFM) 1995
David Norwood, Walter Worobey, David Peterson, Jim Sweet, Donald Johnson, Doyle Miller, and David Andaleon
DTPA619 Applications of Diamond Films and Related Materials (DFM) 1995