Abstract
Grooving CVD diamond films using a focused ion beam (FIB) to quarry micro parts is described. The substrate-side surface of a polycrystalline diamond film which is prepared by means of microwave plasma CVD, is able to be grooved by a focused Ga ion beam scanned straight repeatedly. The groove has cross section whose shape is like an inverted Gaussian distribution curve. And the surface roughness of the films before grooved influences that of grooves. Under the same irradiation conditions, deeper, narrower, in short, high aspect ratio grooves are obtained on B-doped semiconducting microwave plasma CVD diamond films. Coating electrical conductive material is also effective method to obtain high aspect ratio grooves. It is supposed that these results are due to the degree of electrification on the surface and that FIB irradiation is a suitable method for micromachining semiconducting diamond films.
© 1995 Optical Society of America
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