Photodiode with 0.75 W RF Output Power at 15 GHz

Zhi Li; Yang Fu; Huapu Pan; Andreas Beling; Joe C. Campbell

doi:10.1364/ECOC.2011.Tu.3.LeSaleve.5

37th European Conference and Exposition on Optical Communications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper Tu.3.LeSaleve.5
•https://doi.org/10.1364/ECOC.2011.Tu.3.LeSaleve.5

Photodiode with 0.75 W RF Output Power at 15 GHz

Zhi Li, Yang Fu, Huapu Pan, Andreas Beling, and Joe C. Campbell

European Conference and Exposition on Optical Communications 2011

Geneva Switzerland
18–22 September 2011
ISBN: 978-1-55752-931-2

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PHOTODIODES & RECEIVERS (Tu.3.LeSaleve)

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Z. Li, Y. Fu, H. Pan, A. Beling, and J. C. Campbell, "Photodiode with 0.75 W RF Output Power at 15 GHz," in 37th European Conference and Exposition on Optical Communications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper Tu.3.LeSaleve.5.

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Abstract

We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with a record-high RF output power of 0.75 W at 15 GHz and OIP3 up to 59 dBm. The photodiode has responsivity of 0.7 A/W, 3 dB-bandwidth > 15 GHz and saturation photocurrent > 180 mA at 11 V reverse bias.

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