Abstract

We have measured photoinduced carrier lifetimes in silicon nanoclusters. Both clusters embedded in a dielectric matrix and those in the form of powders were studied. The former were deposited using plasma-enhanced chemical vapour deposition, the latter prepared by CO₂ laser pyrolysis of silane. Carrier lifetimes were measured by monitoring the time evolution of photogenerated free-carrier absorption. Photocarriers were generated using modulated 514nm light from an argon-ion laser and the induced absorption probed using an 849nm probe laser. Figure 1 (below) shows the the transient absorption due to photoinduced carriers.

© 1998 IEEE