Abstract
Photoconductively gated ultrafast scanning tunneling microscopes (USTM’s) have been demonstrated on transmission lines.12 We show its applicability on semiconductor structures and use the USTM to resolve field transients on semiconductor layers. A 100-fs laser pump beam generates carriers in the semiconductor layer while the probe beam gates the signal picked up by the tunneling tip in a photoconductive switch. The sample consists of a 1.5-μm thick layer of MBE grown GaAs layer grown at either standard or low substrate temperature (LT GaAs). The GaAs layer is placed on a transparent substrate with a semitransparent Au-layer by epitaxial lift-off. The transparent substrate allows for illumination from the back (Au) side as well as from the front (tip) side.
© 1998 IEEE
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