Abstract
Results of characterization of amorphous silicon germanium borum deposited by low frequency plasma enhanced chemical vapor deposition are presented. The structure has been studied by IR and Raman spectrocopy. Transport of carriers has been studied by measurement conductivity dependence on temperature. The optical properties have been determined using Swanepoel’s method.
© 2003 Optical Society of America
PDF ArticleMore Like This
Rui Xu, Wei Li, Jian He, Kang-Cheng Qi, and Ya-Dong Jiang
83120Q Asia Communications and Photonics Conference and Exhibition (ACP) 2011
N.A. Davidenko, N.G. Kuvshinsky, and A.A. Ishchenko
224 Photorefractive Effects, Materials, and Devices (PR) 2003
Jian He, Wei Li, Rui Xu, Kang-Cheng Qi, and Ya-Dong Jiang
831206 Asia Communications and Photonics Conference and Exhibition (ACP) 2011