Abstract
We achieved extremely-high-density steady state carrier injection and transport at over ~ 10KA/cm2 into organic thin films. Using a silicon substrate with a high thermal conductivity of 148 W/m·k and a small size cathode with a diameter of d = 50 μm, we achieved a maximum current density of Jmax = 12,222A/cm2 in an ITO/Copper phthalocyanine/MgAg/Ag device during a fraction of second under direct current sweep. Further, we also achieved very high current density exceeding 10KA/cm2 using photolithography technique. In the CuPc based devices, we observed characteristic current density (J) – voltage (V) behavior, indicating that the J-V characteristics are controlled by both of the trap-free space-charge-limited current and the trapped-charge-limited current.
© 2005 Optical Society of America
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