Analysis of the Relative Intensity Noise Characteristics of the Strained AlGaInN LDs under High Frequency Modulation

Hyung Uk Cho; Jong Chang Yi

doi:10.1364/FIO.2009.FThK2

Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper FThK2
•https://doi.org/10.1364/FIO.2009.FThK2

Analysis of the Relative Intensity Noise Characteristics of the Strained AlGaInN LDs under High Frequency Modulation

Hyung Uk Cho and Jong Chang Yi

Frontiers in Optics 2009

San Jose, California United States
11–15 October 2009
ISBN: 978-1-55752-878-0

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Optoelectronics (FThK)

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H. U. Cho and J. C. Yi, "Analysis of the Relative Intensity Noise Characteristics of the Strained AlGaInN LDs under High Frequency Modulation," in Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper FThK2.

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Abstract

The relative intensity noise (RIN) characteristics in blue laser diodes on wurtzite AlGaInN MQW structures were investigated using the rate equations with the quantum Langevin noise model. The device parameters were extracted from the band structures of the MQW active region by using the self-consistent multiband Hamiltonian for the strained wurtzite crystal structure. This method has been applied to the strained MQW LDs for various conditions including the external feedback and the high frequency current injection.

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