Abstract
The work generalizes the results of studies of morphological, structural, optical and electrical properties of SiGe/Si nanoheterostructures. It is shown that the photoconductivity of nanoheterostructures SiGe/Si in the infrared range depending on the component composition, size and magnitude of the mechanical stresses in Si1-xGex nanoislands is determined by interband and intraband transitions involving localized states of the valence band of the nanoislands.
© 2014 Optical Society of America
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