Abstract
Two-dimensional device simulator of laser diodes has been introduced and its capability for a quantitative device design of 1.3-µm InGaAsP ridge-waveguide lasers has been shown. It has been quantitatively clarified that the current spreading in the cladding layer plays a key role in determining the threshold current. In addition, it is found that the nonradiative recombination exerts a significant influence not only on the threshold current but also on the carrier distribution in the active layer, that is, the lateral gain profile.
© 1989 Optical Society of America
PDF ArticleMore Like This
G.P. Bava, I. Maio, and I. Montrosset
SA4 Numerical Simulation and Analysis in Guided-Wave Optics and Opto-Electronics (GWOE) 1989
Shunji Seki, Takayuki Yamanaka, and Katsuhiko Kurumada
WG1 Integrated Photonics Research (IPR) 1990
I. P. Kaminow, L. W. Stultz, R. E. Nahory, and J. C. Dewinter
FA2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1981