Abstract
Since the first development of GaAlAs-GaAs heterostructure lasers (1-3) most of these devices have been grown by liquid-phase epitaxy (LPE) (4). In the past few yeras, another technique, that of molecular-beam epitaxy (MBE), has been extensively studied (5) and used to grow structures for room-temperature doubleheterostructure (DH) GaAlAs-GaAs lasers (6). Both of these techniques have inherent disadvantages and limitations for the large-scale, cost-effective production of such devices.
© 1978 Optical Society of America
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