Abstract
The first demonstration of the growth of GaAs-AlxGa1-xAs transverse-junction stripe (TJS) lasers on semi-insulating substrates was reported by Lee, Margalit and Yariv.(1,2) Lasers of this type are characterized by low thresholds and stable single-mode operation up to 110°C.(3) Recently, long life CW operation of TJS lasers has been demonstrated by Susaki et al.(4) These previous results were achieved using liquid phase epitaxy (LPE), with thresholds falling in the range of 30 to 40 mA. Molecular beam epitaxy (MBE) is a relatively new crystal growth technique which not only offers precise dimensional controls in the film growth direction, but also can achieve selective two-dimensional structures on the wafer surface. For example, monolithic integration of a laser and a waveguide with a tapered coupler has been demonstrated with MBE.(9) We report here the first preparation by MBE of low threshold, single mode TJS lasers grown on semi-insulating substrates. In conjunction with the two-dimensional selective growth capability of MBE, the results may have potential applications in the field of integrated optics.
© 1980 Optical Society of America
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