Abstract
Recent interest in long wavelength photo-detectors for fiber optic communications systems operating in the 1.0 to 1.7µm wavelength region has been directed at the possible utilization of a very low capacitance PIN photodiode coupled directly to a low noise FET amplifier.1 We report on the properties of PIN photodiodes fabricated from In0.53Ga0.47AS material which meet the requirements for this PIN-FET photo-receiver application.
© 1980 Optical Society of America
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