Abstract
Recently, there has been substantial interest in the monolithic integration of semiconductor lasers with other optoelectronic devices. (1-3) The conventional method of obtaining optical feedback in a semiconductor laser is to cleave opposite facets of the substrate. However, with this method, the number of optoelectronic devices that can be integrated onto the chip with the laser is severely restricted by the laser cavity length, which is typically about 300 μm.
© 1982 Optical Society of America
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